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Nitrogen Photofixation over III‐Nitride Nanowires Assisted by Ruthenium Clusters of Low Atomicity
Author(s) -
Li Lu,
Wang Yichen,
Vanka Srinivas,
Mu Xiaoyue,
Mi Zetian,
Li ChaoJun
Publication year - 2017
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201703301
Subject(s) - nanoclusters , materials science , ruthenium , nitride , atomicity , catalysis , photocatalysis , semiconductor , nanowire , electron transfer , photochemistry , nanotechnology , chemical engineering , chemistry , optoelectronics , biochemistry , database transaction , layer (electronics) , computer science , engineering , programming language
In many heterogeneous catalysts, the interaction of supported metal species with a matrix can alter the electronic and morphological properties of the metal and manipulate its catalytic properties. III‐nitride semiconductors have a unique ability to stabilize ultra‐small ruthenium (Ru) clusters (ca. 0.8 nm) at a high loading density up to 5 wt %. n‐Type III‐nitride nanowires decorated with Ru sub‐nanoclusters offer controlled surface charge properties and exhibit superior UV‐ and visible‐light photocatalytic activity for ammonia synthesis at ambient temperature. A metal/semiconductor interfacial Schottky junction with a 0.94 eV barrier height can greatly facilitate photogenerated electron transfer from III‐nitrides to Ru, rendering Ru an electron sink that promotes N≡N bond cleavage, and thereby achieving low‐temperature ammonia synthesis.