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Donor‐Stabilized Silylene/Phosphine‐Supported Carbon(0) Center with High Electron Density
Author(s) -
Troadec Thibault,
Wasano Tatsuya,
Lenk Romaric,
Baceiredo Antoine,
SaffonMerceron Nathalie,
Hashizume Daisuke,
Saito Yosuke,
Nakata Norio,
Branchadell Vicenç,
Kato Tsuyoshi
Publication year - 2017
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201702858
Subject(s) - silylene , lone pair , delocalized electron , chemistry , phosphine , crystallography , molecule , carbon fibers , atom (system on chip) , allene , electron donor , electron pair , photochemistry , silicon , computational chemistry , electron , materials science , physics , organic chemistry , catalysis , quantum mechanics , composite number , computer science , composite material , embedded system
An isolable donor‐stabilized silavinylidene phosphorane was synthesized. This molecule, which can also be regarded as a new carbon(0) complex featuring a phosphine and a donor‐stabilized silylene ligand, presents a central carbon atom with a remarkably high electron density (−1.82). Furthermore, the experimental electron‐density study of this compound demonstrates the delocalization of the σ‐lone pair at the central carbon atom toward the silicon center, a feature which is remarkably different from electronic situation of other bent‐allene‐type molecules. This result clearly demonstrates the powerful electron‐donating ability of donor‐stabilized silylene ligands, as well as their excellent electron‐acceptor properties.