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Two‐Dimensional Semiconductors Grown by Chemical Vapor Transport
Author(s) -
Hu Dake,
Xu Guanchen,
Xing Lei,
Yan Xingxu,
Wang Jingyi,
Zheng Jingying,
Lu Zhixing,
Wang Peng,
Pan Xiaoqing,
Jiao Liying
Publication year - 2017
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201700439
Subject(s) - semiconductor , crystallinity , materials science , crystal growth , nanotechnology , crystal (programming language) , optoelectronics , chemical engineering , electronics , crystallography , chemistry , composite material , computer science , programming language , engineering
Developing controlled approaches for synthesizing high‐quality two‐dimensional (2D) semiconductors is essential for their practical applications in novel electronics. The application of chemical vapor transport (CVT), an old single‐crystal growth technique, has been extended from growing 3D crystals to synthesizing 2D atomic layers by tuning the growth kinetics. Both single crystalline individual flakes and continuous films of 1 L MoS 2 were successfully obtained with CVT approach at low growth temperatures of 300–600 °C. The obtained 1 L MoS 2 exhibits high crystallinity and comparable mobility to mechanically exfoliated samples, as confirmed by both atomic resolution microscopic imaging and electrical transport measurements. Besides MoS 2 , this method was also used in the growth of 2D WS 2 , MoSe 2 , Mo x W 1− x S 2 alloys, and ReS 2 , thus opening up a new way for the controlled synthesis of various 2D semiconductors.