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Transition‐Metal‐Doped NIR‐Emitting Silicon Nanocrystals
Author(s) -
Chandra Sourov,
Masuda Yoshitake,
Shirahata Naoto,
Winnik Françoise M.
Publication year - 2017
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201700436
Subject(s) - materials science , doping , dopant , photoluminescence , nanocrystal , quantum yield , transition metal , silicon , photochemistry , inorganic chemistry , nanotechnology , chemistry , optoelectronics , organic chemistry , catalysis , physics , quantum mechanics , fluorescence
Impurity‐doping in nanocrystals significantly affects their electronic properties and diversifies their applications. Herein, we report the synthesis of transition metal (Mn, Ni, Co, Cu)‐doped oleophilic silicon nanocrystals (SiNCs) through hydrolysis/polymerization of triethoxysilane with acidic aqueous metal salt solutions, followed by thermal disproportionation of the resulting gel into a doped‐Si/SiO 2 composite that, upon HF etching and hydrosilylation with 1‐ n ‐octadecene, produces free‐standing octadecyl‐capped doped SiNCs (diameter≈3 to 8 nm; dopant <0.2 atom %). Metal‐doping triggers a red‐shift of the SiNC photoluminescence (PL) of up to 270 nm, while maintaining high PL quantum yield (26 % for Co doping).