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Low‐Temperature Atomic Layer Deposition of MoS 2 Films
Author(s) -
Jurca Titel,
Moody Michael J.,
Henning Alex,
Emery Jonathan D.,
Wang Binghao,
Tan Jeffrey M.,
Lohr Tracy L.,
Lauhon Lincoln J.,
Marks Tobin J.
Publication year - 2017
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201611838
Subject(s) - atomic layer deposition , amorphous solid , annealing (glass) , fabrication , nanotechnology , materials science , thin film , layer (electronics) , chemical vapor deposition , chemical engineering , chemistry , crystallography , metallurgy , engineering , medicine , alternative medicine , pathology
Wet chemical screening reveals the very high reactivity of Mo(NMe 2 ) 4 with H 2 S for the low‐temperature synthesis of MoS 2 . This observation motivated an investigation of Mo(NMe 2 ) 4 as a volatile precursor for the atomic layer deposition (ALD) of MoS 2 thin films. Herein we report that Mo(NMe 2 ) 4 enables MoS 2 film growth at record low temperatures—as low as 60 °C. The as‐deposited films are amorphous but can be readily crystallized by annealing. Importantly, the low ALD growth temperature is compatible with photolithographic and lift‐off patterning for the straightforward fabrication of diverse device structures.
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