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Regenerative Electroless Etching of Silicon
Author(s) -
Kolasinski Kurt W.,
Gimbar Nathan J.,
Yu Haibo,
Aindow Mark,
Mäkilä Ermei,
Salonen Jarno
Publication year - 2017
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201610162
Subject(s) - etching (microfabrication) , wafer , semiconductor , materials science , silicon , nanotechnology , nanocrystalline material , metallurgy , chemical engineering , optoelectronics , layer (electronics) , engineering
Abstract Regenerative electroless etching (ReEtching), described herein for the first time, is a method of producing nanostructured semiconductors in which an oxidant (Ox 1 ) is used as a catalytic agent to facilitate the reaction between a semiconductor and a second oxidant (Ox 2 ) that would be unreactive in the primary reaction. Ox 2 is used to regenerate Ox 1 , which is capable of initiating etching by injecting holes into the semiconductor valence band. Therefore, the extent of reaction is controlled by the amount of Ox 2 added, and the rate of reaction is controlled by the injection rate of Ox 2 . This general strategy is demonstrated specifically for the production of highly luminescent, nanocrystalline porous Si from the reaction of V 2 O 5 in HF(aq) as Ox 1 and H 2 O 2 (aq) as Ox 2 with Si powder and wafers.