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Instantaneous Functionalization of Chemically Etched Silicon Nanocrystal Surfaces
Author(s) -
Mobarok Md Hosnay,
Purkait Tapas K.,
Islam Muhammad Amirul,
Miskolzie Mark,
Veinot Jonathan G. C.
Publication year - 2017
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201609651
Subject(s) - hydrosilylation , surface modification , xenon difluoride , hydride , silicon , reactivity (psychology) , nanocrystal , materials science , chemistry , chemical engineering , nanotechnology , photochemistry , polymer chemistry , inorganic chemistry , organic chemistry , catalysis , metal , medicine , alternative medicine , pathology , engineering
Remarkable advances in surface hydrosilylation reactions of C=C and C=O bonds on hydride‐terminated silicon have revolutionized silicon surface functionalization. However, existing methods for functionalizing hydride‐terminated Si nanocrystals (H‐SiNCs) require long reaction times and elevated temperatures. Herein, we report a room‐temperature method for functionalizing H‐SiNC surfaces within seconds by stripping outermost atoms on H‐SiNC surfaces with xenon difluoride (XeF 2 ). Detailed analysis of the reaction byproducts by in situ NMR spectroscopy and GC‐MS provided unprecedented insight into NC surface composition and reactivity as well as the complex reaction mechanism of XeF 2 activated hydrosilylation.