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Inside Back Cover: Vacancy‐Induced Electronic Structure Variation of Acceptors and Correlation with Proton Conduction in Perovskite Oxides (Angew. Chem. Int. Ed. 43/2016)
Author(s) -
Kim HyeSung,
Jang Ahreum,
Choi SiYoung,
Jung WooChul,
Chung SungYoon
Publication year - 2016
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201607768
Subject(s) - trapping , proton , ionic bonding , annealing (glass) , chemical physics , thermal conduction , materials science , oxygen , perovskite (structure) , conduction band , vacancy defect , ion , chemistry , molecular physics , crystallography , physics , ecology , organic chemistry , quantum mechanics , composite material , biology , electron
Proton trapping is a major cause of retardation of proton conduction in the bulk of perovskite oxides and results from the strong electrostatic attraction between positively charged protons and negatively charged acceptors. In their Communication on page 13499 ff., S.‐Y. Chung and co‐workers show that clustering of oxygen vacancies to acceptors can be induced by post‐annealing and that proton trapping is thereby suppressed. The impact of the oxygen vacancies and their effective charge on ionic conduction is shown.