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Wide Band‐Gap Bismuth‐based p‐Dopants for Opto‐Electronic Applications
Author(s) -
Pecqueur Sébastien,
Maltenberger Anna,
Petrukhina Marina A.,
Halik Marcus,
Jaeger Arndt,
Pentlehner Dominik,
Schmid Günter
Publication year - 2016
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201601926
Subject(s) - dopant , bismuth , doping , oled , materials science , optoelectronics , semiconductor , fabrication , band gap , organic semiconductor , electronics , nanotechnology , chemistry , metallurgy , medicine , alternative medicine , layer (electronics) , pathology
Ten new efficient p‐dopants for conductivity doping of organic semiconductors for OLEDs are identified. The key advantage of the electrophilic tris(carboxylato) bismuth(III) compounds is the unique low absorption of the resulting doped layers which promotes the efficiency of OLED devices. The combination of these features with their low fabrication cost, volatility, and stability, make these materials very attractive as dopants in organic electronics.