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Grafting Poly(3‐hexylthiophene) from Silicon Nanocrystal Surfaces: Synthesis and Properties of a Functional Hybrid Material with Direct Interfacial Contact
Author(s) -
Islam Muhammad Amirul,
Purkait Tapas K.,
Mobarok Md Hosnay,
Hoehlein Ignaz M. D.,
Sinelnikov Regina,
Iqbal Muhammad,
Azulay Doron,
Balberg Isaac,
Millo Oded,
Rieger Bernhard,
Veinot Jonathan G. C.
Publication year - 2016
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201601341
Subject(s) - materials science , nanotechnology , semiconductor , silicon , polymer , nanocrystal , sinc function , conjugated system , heterojunction , covalent bond , hybrid material , surface photovoltage , acceptor , electron transfer , optoelectronics , photochemistry , chemistry , composite material , organic chemistry , computer science , computer vision , physics , condensed matter physics , quantum mechanics , spectroscopy
Hybrid functional materials (HFMs) comprised of semiconductor nanoparticles and conjugated polymers offer the potential of synergetic photophysical properties. We have developed HFMs based upon silicon nanocrystals (SiNCs) and the conductive polymer poly(3‐hexylthiophene) (SiNC@P3HT) by applying surface‐initiated Kumada catalyst transfer polycondensation (SI‐KCTP). One unique characteristic of the developed SiNC@P3HT is the formation of a direct covalent bonding between SiNCs and P3HT. The presented method for obtaining direct interfacial attachment, which is not accessible using other methods, may allow for the development of materials with efficient electronic communication at the donor–acceptor interfaces. Systematic characterization provides evidence of a core–shell structure, enhanced interfacial electron and/or energy transfer between the P3HT and SiNC components, as well as formation of a type‐II heterostructure.