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Versatile p‐Type Chemical Doping to Achieve Ideal Flexible Graphene Electrodes
Author(s) -
Han TaeHee,
Kwon SungJoo,
Li Nannan,
Seo HongKyu,
Xu Wentao,
Kim Kwang S.,
Lee TaeWoo
Publication year - 2016
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201600414
Subject(s) - graphene , materials science , anode , doping , work function , ohmic contact , sheet resistance , optoelectronics , transmittance , electrode , nanotechnology , chemical engineering , oled , layer (electronics) , chemistry , engineering
We report effective solution‐processed chemical p‐type doping of graphene using trifluoromethanesulfonic acid (CF 3 SO 3 H, TFMS), that can provide essential requirements to approach an ideal flexible graphene anode for practical applications: i) high optical transmittance, ii) low sheet resistance (70 % decrease), iii) high work function (0.83 eV increase), iv) smooth surface, and iv) air‐stability at the same time. The TFMS‐doped graphene formed nearly ohmic contact with a conventional organic hole transporting layer, and a green phosphorescent organic light‐emitting diode with the TFMS‐doped graphene anode showed lower operating voltage, and higher device efficiencies (104.1 cd A −1 , 80.7 lm W −1 ) than those with conventional ITO (84.8 cd A −1 , 73.8 lm W −1 ).
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