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Solution Layer Deposition: A Technique for the Growth of Ultra‐Pure Manganese Oxides on Silica at Room Temperature
Author(s) -
Cure Jérémy,
Piettre Kilian,
Coppel Yannick,
Beche Eric,
Esvan Jérôme,
Collière Vincent,
Chaudret Bruno,
Fau Pierre
Publication year - 2016
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201509715
Subject(s) - manganese , layer (electronics) , materials science , x ray photoelectron spectroscopy , silicon , amorphous solid , high resolution transmission electron microscopy , oxide , deposition (geology) , substrate (aquarium) , atomic layer deposition , metal , thin film , chemical engineering , inorganic chemistry , microelectronics , carbon fibers , nanotechnology , chemistry , composite number , transmission electron microscopy , metallurgy , organic chemistry , composite material , paleontology , oceanography , sediment , geology , engineering , biology
With the ever increasing miniaturization in microelectronic devices, new deposition techniques are required to form high‐purity metal oxide layers. Herein, we report a liquid route to specifically produce thin and conformal amorphous manganese oxide layers on silicon substrate, which can be transformed into a manganese silicate layer. The undesired insertion of carbon into the functional layers is avoided through a solution metal–organic chemistry approach named Solution Layer Deposition (SLD). The growth of a pure manganese oxide film by SLD takes place through the decoordination of ligands from a metal–organic complex in mild conditions, and coordination of the resulting metal atoms on a silica surface. The mechanism of this chemical liquid route has been elucidated by solid‐state 29 Si MAS NMR, XPS, SIMS, and HRTEM.