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Trapping of Oxygen Vacancies at Crystallographic Shear Planes in Acceptor‐Doped Pb‐Based Ferroelectrics
Author(s) -
Batuk Dmitry,
Batuk Maria,
Tsirlin Alexander A.,
Hadermann Joke,
Abakumov Artem M.
Publication year - 2015
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201507729
Subject(s) - doping , crystallography , materials science , ferroelectricity , neutron diffraction , acceptor , oxygen , transmission electron microscopy , ion , planar , condensed matter physics , crystal structure , chemistry , nanotechnology , physics , optoelectronics , organic chemistry , dielectric , computer graphics (images) , computer science
The defect chemistry of the ferroelectric material PbTiO 3 after doping with Fe III acceptor ions is reported. Using advanced transmission electron microscopy and powder X‐ray and neutron diffraction, we demonstrate that even at concentrations as low as circa 1.7 % (material composition approximately ABO 2.95 ), the oxygen vacancies are trapped into extended planar defects, specifically crystallographic shear planes. We investigate the evolution of these defects upon doping and unravel their detailed atomic structure using the formalism of superspace crystallography, thus unveiling their role in nonstoichiometry in the Pb‐based perovskites.