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Single‐Nanoparticle Collision Events: Tunneling Electron Transfer on a Titanium Dioxide Passivated n‐Silicon Electrode
Author(s) -
Ahn Hyun S.,
Bard Allen J.
Publication year - 2015
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201506963
Subject(s) - photocurrent , electrode , materials science , silicon , electron transfer , amorphous silicon , silicon dioxide , amorphous solid , cathode , titanium , electron , quantum tunnelling , anode , dark current , atomic physics , nanotechnology , optoelectronics , chemistry , crystalline silicon , photochemistry , composite material , physics , metallurgy , organic chemistry , quantum mechanics , photodetector
Single‐nanoparticle collisions were observed on an n‐type silicon electrode (600 μm diameter) passivated by a thin layer of amorphous TiO 2 , where the current steps occurred by tunneling electron transfer. The observed collision frequency was in reasonable agreement with that predicted from theory. The isolated electrode, after a collision experiment, with a Pt/TiO 2 /n‐Si architecture was shown to retain the photoelectrochemical properties of n‐Si without photocorrosion or current decay. The Pt/TiO 2 /n‐Si electrode produced 19 mA cm −2 of photocurrent density under 100 mW cm −2 irradiation from a xenon lamp during oxygen evolution without current fading for over 12 h.