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A Solution‐Processable Donor–Acceptor Compound Containing Boron(III) Centers for Small‐Molecule‐Based High‐Performance Ternary Electronic Memory Devices
Author(s) -
Poon ChunTing,
Wu Di,
Lam Wai Han,
Yam Vivian WingWah
Publication year - 2015
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201504997
Subject(s) - ternary operation , acceptor , boron , resistive random access memory , materials science , small molecule , fabrication , molecule , non volatile memory , optoelectronics , voltage , nanotechnology , chemistry , electrical engineering , computer science , condensed matter physics , organic chemistry , physics , alternative medicine , medicine , biochemistry , pathology , programming language , engineering
A novel small‐molecule boron(III)‐containing donor–acceptor compound has been synthesized and employed in the fabrication of solution‐processable electronic resistive memory devices. High ternary memory performances with low turn‐on ( V Th1 =2.0 V) and distinct threshold voltages ( V Th2 =3.3 V), small reading bias (1.0 V), and long retention time (>10 4 seconds) with a large ON/OFF ratio of each state (current ratio of “OFF”, “ON1”, and “ON2”=1:10 3 :10 6 ) have been demonstrated, suggestive of its potential application in high‐density data storage. The present design strategy provides new insight in the future design of memory devices with multi‐level transition states.