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Single‐Crystal Semiconductors with Narrow Band Gaps for Solar Water Splitting
Author(s) -
Wang Tuo,
Gong Jinlong
Publication year - 2015
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201503346
Subject(s) - semiconductor , water splitting , surface photovoltage , materials science , band gap , planar , optoelectronics , substrate (aquarium) , crystal (programming language) , hydrogen , nanotechnology , chemistry , photocatalysis , physics , organic chemistry , quantum mechanics , spectroscopy , biochemistry , computer graphics (images) , oceanography , computer science , programming language , geology , catalysis
Solar water splitting provides a clean and renewable approach to produce hydrogen energy. In recent years, single‐crystal semiconductors such as Si and InP with narrow band gaps have demonstrated excellent performance to drive the half reactions of water splitting through visible light due to their suitable band gaps and low bulk recombination. This Minireview describes recent research advances that successfully overcome the primary obstacles in using these semiconductors as photoelectrodes, including photocorrosion, sluggish reaction kinetics, low photovoltage, and unfavorable planar substrate surface. Surface modification strategies, such as surface protection, cocatalyst loading, surface energetics tuning, and surface texturization are highlighted as the solutions.