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CuSbS 2 ‐Sensitized Inorganic–Organic Heterojunction Solar Cells Fabricated Using a Metal–Thiourea Complex Solution
Author(s) -
Choi Yong Chan,
Yeom Eun Joo,
Ahn Tae Kyu,
Seok Sang Il
Publication year - 2015
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201411329
Subject(s) - thiourea , materials science , electrode , open circuit voltage , energy conversion efficiency , thermal decomposition , annealing (glass) , spin coating , short circuit , current density , mesoporous material , heterojunction , solar cell , chemical engineering , doping , metal , polymer solar cell , optoelectronics , nanotechnology , thin film , voltage , chemistry , composite material , organic chemistry , metallurgy , catalysis , physics , quantum mechanics , engineering
The device performance of sensitizer‐architecture solar cells based on a CuSbS 2 light sensitizer is presented. The device consists of F‐doped SnO 2 substrate/TiO 2 blocking layer/mesoporous TiO 2 /CuSbS 2 /hole‐transporting material/Au electrode. The CuSbS 2 was deposited by repeated cycles of spin coating of a Cu‐Sb‐thiourea complex solution and thermal decomposition, followed by annealing in Ar at 500 °C. Poly(2,6‐(4,4‐bis‐(2‐ethylhexyl)‐4 H ‐cyclopenta[2,1‐ b ;3,4‐ b ′]dithiophene)‐alt‐4,7(2,1,3‐benzothiadiazole)) (PCPDTBT) was used as the hole‐transporting material. The best‐performing cell exhibited a 3.1 % device efficiency, with a short‐circuit current density of 21.5 mA cm −2 , an open‐circuit voltage of 304 mV, and a fill factor of 46.8 %.
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