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Half‐Metallicity in Single‐Layered Manganese Dioxide Nanosheets by Defect Engineering
Author(s) -
Wang Hui,
Zhang Jiajia,
Hang Xudong,
Zhang Xiaodong,
Xie Junfeng,
Pan Bicai,
Xie Yi
Publication year - 2015
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201410031
Subject(s) - nanosheet , spintronics , vacancy defect , materials science , manganese , metallicity , semiconductor , nanotechnology , condensed matter physics , optoelectronics , crystallography , ferromagnetism , chemistry , metallurgy , computer science , physics , computer vision , stars
Defect engineering is considered as one of the most efficient strategies to regulate the electronic structure of materials and involves the manipulation of the types, concentrations, and spatial distributions of defects, resulting in unprecedented properties. It is shown that a single‐layered MnO 2 nanosheet with vacancies is a robust half‐metal, which was confirmed by theoretical calculations, whereas vacancy‐free single‐layered MnO 2 is a typical semiconductor. The half‐metallicity of the single‐layered MnO 2 nanosheet can be observed for a wide range of vacancy concentrations and even in the co‐presence of Mn and O vacancies. This work enables the development of half‐metals by defect engineering of well‐established low‐dimensional materials, which may be used for the design of next‐generation paper‐like spintronics.