Premium
Nanocrystalline‐Graphene‐Tailored Hexagonal Boron Nitride Thin Films
Author(s) -
Lee Kang Hyuck,
Shin HyeonJin,
Kumar Brijesh,
Kim Han Sol,
Lee Jinyeong,
Bhatia Ravi,
Kim SangHyeob,
Lee InYeal,
Lee Hyo Sug,
Kim GilHo,
Yoo JiBeom,
Choi JaeYoung,
Kim SangWoo
Publication year - 2014
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201405762
Subject(s) - materials science , boron nitride , nanocrystalline material , graphene , thin film , chemical vapor deposition , sapphire , nanotechnology , wafer , substrate (aquarium) , hexagonal boron nitride , dielectric , boron , chemical engineering , optoelectronics , optics , chemistry , laser , oceanography , physics , organic chemistry , engineering , geology
Unintentionally formed nanocrystalline graphene (nc‐G) can act as a useful seed for the large‐area synthesis of a hexagonal boron nitride (h‐BN) thin film with an atomically flat surface that is comparable to that of exfoliated single‐crystal h‐BN. A wafer‐scale dielectric h‐BN thin film was successfully synthesized on a bare sapphire substrate by assistance of nc‐G, which prevented structural deformations in a chemical vapor deposition process. The growth mechanism of this nc‐G‐tailored h‐BN thin film was systematically analyzed. This approach provides a novel method for preparing high‐quality two‐dimensional materials on a large surface.