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Triazine‐Based Graphitic Carbon Nitride: a Two‐Dimensional Semiconductor
Author(s) -
AlgaraSiller Gerardo,
Severin Nikolai,
Chong Samantha Y.,
Björkman Torbjörn,
Palgrave Robert G.,
Laybourn Andrea,
Antonietti Markus,
Khimyak Yaroslav Z.,
Krasheninnikov Arkady V.,
Rabe Jürgen P.,
Kaiser Ute,
Cooper Andrew I.,
Thomas Arne,
Bojdys Michael J.
Publication year - 2014
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201402191
Subject(s) - materials science , carbon nitride , x ray photoelectron spectroscopy , band gap , graphitic carbon nitride , semiconductor , optoelectronics , carbon fibers , nitride , thin film , graphite , spectroscopy , direct and indirect band gaps , nanotechnology , chemical engineering , chemistry , composite material , composite number , photocatalysis , organic chemistry , layer (electronics) , quantum mechanics , physics , engineering , catalysis
Graphitic carbon nitride has been predicted to be structurally analogous to carbon‐only graphite, yet with an inherent bandgap. We have grown, for the first time, macroscopically large crystalline thin films of triazine‐based, graphitic carbon nitride (TGCN) using an ionothermal, interfacial reaction starting with the abundant monomer dicyandiamide. The films consist of stacked, two‐dimensional (2D) crystals between a few and several hundreds of atomic layers in thickness. Scanning force and transmission electron microscopy show long‐range, in‐plane order, while optical spectroscopy, X‐ray photoelectron spectroscopy, and density functional theory calculations corroborate a direct bandgap between 1.6 and 2.0 eV. Thus TGCN is of interest for electronic devices, such as field‐effect transistors and light‐emitting diodes.