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Direct Solvothermal Synthesis of B/N‐Doped Graphene
Author(s) -
Jung SunMin,
Lee Eun Kwang,
Choi Min,
Shin Dongbin,
Jeon InYup,
Seo JeongMin,
Jeong Hu Young,
Park Noejung,
Oh Joon Hak,
Baek JongBeom
Publication year - 2014
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201310260
Subject(s) - graphene , solvothermal synthesis , materials science , doping , nanotechnology , chemical engineering , optoelectronics , engineering
Heteroatom‐doping into graphitic networks has been utilized for opening the band gap of graphene. However, boron‐doping into the graphitic framework is extremely limited, whereas nitrogen‐doping is relatively feasible. Herein, boron/nitrogen co‐doped graphene (BCN‐graphene) is directly synthesized from the reaction of CCl 4 , BBr 3 , and N 2 in the presence of potassium. The resultant BCN‐graphene has boron and nitrogen contents of 2.38 and 2.66 atom %, respectively, and displays good dispersion stability in N ‐methyl‐2‐pyrrolidone, allowing for solution casting fabrication of a field‐effect transistor. The device displays an on/off ratio of 10.7 with an optical band gap of 3.3 eV. Considering the scalability of the production method and the benefits of solution processability, BCN‐graphene has high potential for many practical applications.