Dependency of the Tunneling Decay Coefficient in Molecular Tunneling Junctions on the Topography of the Bottom Electrodes | Zendy

Yuan Li | Zendy; Jiang Li | Zendy; Zhang Bo | Zendy; Nijhuis Christian A. | Zendy

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Dependency of the Tunneling Decay Coefficient in Molecular Tunneling Junctions on the Topography of the Bottom Electrodes

Author(s) -

Yuan Li,

Jiang Li,

Zhang Bo,

Nijhuis Christian A.

Publication year - 2014

Publication title -

angewandte chemie international edition

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 5.831

H-Index - 550

eISSN - 1521-3773

pISSN - 1433-7851

DOI - 10.1002/anie.201309506

Subject(s) - quantum tunnelling , grain boundary , electrode , monolayer , materials science , scanning tunneling microscope , condensed matter physics , self assembled monolayer , range (aeronautics) , nanotechnology , chemistry , optoelectronics , physics , metallurgy , composite material , microstructure

A controversy in molecular electronics is the unexplained large spread in values of the tunneling decay coefficient β in tunneling junctions with self‐assembled monolayers of n ‐alkanethiolates (SC n ). We show control of the β value over the range 0.4–1.0 n C −1 in junctions by changing the topography of the bottom electrodes that support the SAMs. Very low β values (0.4–0.5 n C −1 ) are obtained for rough surfaces with large areas of exposed grain boundaries, while β =1.0 n C −1 for smooth surfaces with small areas of exposed grain boundaries.

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