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Unexpected Room‐Temperature Ferromagnetism in Nanostructured Bi 2 Te 3
Author(s) -
Xiao Guanjun,
Zhu Chunye,
Ma Yanming,
Liu Bingbing,
Zou Guangtian,
Zou Bo
Publication year - 2014
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201309416
Subject(s) - spintronics , magnetism , ferromagnetism , condensed matter physics , materials science , magnetic moment , realization (probability) , vacancy defect , topological insulator , quantum , dopant , insulator (electricity) , nanotechnology , doping , physics , quantum mechanics , optoelectronics , statistics , mathematics
There is an urgent need for the development in the field of the magnetism of topological insulators, owing to the necessity for the realization of the quantum anomalous Hall effect. Herein, we discuss experimentally fabricated nanostructured hierarchical architectures of the topological insulator Bi 2 Te 3 without the introduction of any exotic magnetic dopants, in which intriguing room‐temperature ferromagnetism was identified. First‐principles calculations demonstrated that the intrinsic point defect with respect to the antisite Te site is responsible for the creation of a magnetic moment. Such a mechanism, which is different from that of a vacancy defect, provides new insights into the origins of magnetism. Our findings may pave the way for developing future Bi 2 Te 3 ‐based dissipationless spintronics and fault‐tolerant quantum computation.