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Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices
Author(s) -
Wei Dacheng,
Lu Yunhao,
Han Cheng,
Niu Tianchao,
Chen Wei,
Wee Andrew Thye Shen
Publication year - 2013
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201306086
Subject(s) - graphene , dielectric , chemical vapor deposition , plasma etching , materials science , etching (microfabrication) , enhanced data rates for gsm evolution , nanotechnology , plasma , crystal (programming language) , optoelectronics , computer science , physics , telecommunications , layer (electronics) , quantum mechanics , programming language
Born at its final resting place : Moderate etching by a hydrogen plasma during plasma‐enhanced chemical vapor deposition led to a critical equilibrium state of graphene edge growth in which graphene hexagonal single crystals or continuous graphene films were produced directly on dielectric substrates at 400 °C without a catalyst (see picture). The direct use of the resulting high‐quality graphene in devices avoids troublesome transfer processes.