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The Stoichiometry of Electroless Silicon Etching in Solutions of V 2 O 5 and HF
Author(s) -
Kolasinski Kurt W.,
Barclay William B.
Publication year - 2013
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201300755
Subject(s) - stoichiometry , etching (microfabrication) , silicon , materials science , porous silicon , reactive ion etching , conduction band , analytical chemistry (journal) , isotropic etching , valence band , optoelectronics , chemical engineering , nanotechnology , chemistry , electron , band gap , chromatography , layer (electronics) , engineering , physics , quantum mechanics
Performance by an oxidant in a leading role : In the electroless etching of silicon to form nanocrystalline porous‐silicon thin films, the oxidant extracts one electron from the silicon valence band to initiate etching and then a second from the conduction band to suppress H 2 formation. This discovery overturns the conventional wisdom regarding the role of the oxidant in stain etching, the stoichiometry of which was derived from the UV/Vis spectra shown.
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