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Transferable Graphene Oxide by Stamping Nanotechnology: Electron‐Transport Layer for Efficient Bulk‐Heterojunction Solar Cells
Author(s) -
Wang Dong Hwan,
Kim Jung Kyu,
Seo Jung Hwa,
Park Insun,
Hong Byung Hee,
Park Jong Hyeok,
Heeger Alan J.
Publication year - 2013
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201209999
Subject(s) - graphene , nanotechnology , stamping , heterojunction , oxide , materials science , electron transport chain , layer (electronics) , electron , optoelectronics , computer science , physics , chemistry , biochemistry , quantum mechanics , metallurgy
Layer by layer : Electron‐transport layers (ETLs) of transferable graphene oxide (GO) inserted by using a stamping nanotechnology (see picture) result in bulk‐heterojunction (BHJ) solar cells with enhanced power conversion efficiency because of enhanced electron‐charge transport and reduced electronic charge barrier with low series resistance. The GO ETL also increases the stability of the device in air.