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Revealing Interface‐Assisted Charge‐Transfer Mechanisms by Using Silicon Nanowires as Local Probes
Author(s) -
Wang Jindong,
Wang Zhenxing,
Li Qiaochu,
Gan Lin,
Xu Xinjun,
Li Lidong,
Guo Xuefeng
Publication year - 2013
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201209816
Subject(s) - interface (matter) , semiconductor , nanotechnology , nanowire , silicon , silicon nanowires , materials science , quantum dot , optoelectronics , charge (physics) , computer science , physics , capillary number , quantum mechanics , capillary action , composite material
A semiconductor/environment interface has been formed in which suspended silicon nanowires (SiNWs) are in direct contact with photoactive TiO 2 quantum dots. The photoactivity of TiO 2 competes with the intrinsic photoresponses of p‐type silicon nanowires. Rational control of the competitive mechanism realizes remarkable mirror‐imaging photo‐switching and superior rectifying effects in a single SiNW‐based device.

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