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Single‐Layer Semiconducting Nanosheets: High‐Yield Preparation and Device Fabrication
Author(s) -
Zeng Zhiyuan,
Yin Zongyou,
Huang Xiao,
Li Hai,
He Qiyuan,
Lu Gang,
Boey Freddy,
Zhang Hua
Publication year - 2011
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201106004
Subject(s) - fabrication , materials science , layer (electronics) , yield (engineering) , nanotechnology , graphene , nanomaterials , transistor , layer by layer , optoelectronics , thin film transistor , metallurgy , electrical engineering , engineering , medicine , alternative medicine , pathology , voltage
Properly piled up : Single‐layer 2D semiconducting nanomaterials of MoS 2 , WS 2 , TiS 2 , TaS 2 , ZrS 2 , and graphene were fabricated through an electrochemical lithiation process (see picture). The production of single‐layer MoS 2 was achieved in 92 % yield. A single‐layer MoS 2 ‐based thin‐film transistor was fabricated, which was used for sensing NO at a detection limit of 190 ppt.
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