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Generation of a Porous Luminescent Structure Through Ultrasonically Induced Pathways of Silicon Modification
Author(s) -
Skorb Ekaterina V.,
Andreeva Daria V.,
Möhwald Helmuth
Publication year - 2012
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201105084
Subject(s) - porous silicon , silicon , photoluminescence , luminescence , surface modification , sonication , porosity , materials science , porous medium , chemical engineering , nanotechnology , optoelectronics , composite material , engineering
Porous silicon with unique optical properties was formed through an ultrasonication method. This technique allows the one‐step formation of silicon with a purposefully variable porous structure, provides for the possibility of patterned surface‐selective modification, and forms photoluminescent centers and defect states, which can act as centers for charge separation.