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One‐Step Synthesis of Bismuth Telluride Nanosheets of a Few Quintuple Layers in Thickness
Author(s) -
Zhao Yimin,
Hughes Robert W.,
Su Zixue,
Zhou Wuzong,
Gregory Duncan H.
Publication year - 2011
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201104299
Subject(s) - bismuth telluride , raman spectroscopy , basal plane , materials science , telluride , nanotechnology , bismuth , hexagonal crystal system , atom (system on chip) , chalcogen , crystallography , composite material , chemistry , optics , metallurgy , thermoelectric materials , thermal conductivity , physics , computer science , embedded system
Bi 2 Te 3 nanosheets have been synthesized on Si substrates by surface‐assisted chemical vapor transport. The crumpled Bi 2 Te 3 sheets grow in the basal plane of the hexagonal structure and are typically ≤3 nm in thickness (see picture; Te purple, Bi green). Raman studies found that modes involving atom displacement along the c axis that are inactive in the bulk material become Raman‐active in the Bi 2 Te 3 nanosheets.
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