Activation Energies for Diffusion of Defects in Silicon: The Role of the Exchange‐Correlation Functional

DFT calculations were used to determine the activation energies ( E a values) for the diffusion of defects such as O atoms (O i 0 red sphere in the picture) in silicon (blue spheres). The migration paths were obtained from the nudged elastic band method. The activation energies calculated with four exchange‐correlation functionals ( E xc ) were compared to experimental data. The E a values of “atomic‐like” interstitials are mostly independent of E xc , but those of strongly bound impurities are sensitive to the choice of E xc .