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Back Cover: Understanding the Origin of the Low Performance of Chemically Grown Silicon Nanowires for Solar Energy Conversion (Angew. Chem. Int. Ed. 10/2011)
Author(s) -
Yuan Guangbi,
Aruda Kenneth,
Zhou Sa,
Levine Andrew,
Xie Jin,
Wang Dunwei
Publication year - 2011
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201100626
Subject(s) - nanowire , silicon nanowires , crystallinity , silicon , materials science , etching (microfabrication) , cover (algebra) , nanotechnology , doping , int , solar energy conversion , isotropic etching , band gap , chemical engineering , solar cell , crystalline silicon , energy transformation , optoelectronics , solar energy , layer (electronics) , physics , electrical engineering , composite material , computer science , engineering , mechanical engineering , thermodynamics , operating system
The mid‐gap traps as a result of growth chemistry are the main reason for low solar energy conversion efficiencies of chemically grown silicon nanowires. In their Communication on page 2334 ff. D. Wang et al. compare silicon nanowires of the same dimension, doping level, and crystallinity obtained by either electroless etching or chemical growth by using electrochemical techniques.