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Unusual Silicon Connectivities in the Binary Compounds GdSi 5 , CeSi 5 , and Ce 2 Si 7
Author(s) -
Wosylus Aron,
Meier Katrin,
Prots Yurii,
Schnelle Walter,
Rosner Helge,
Schwarz Ulrich,
Grin Yuri
Publication year - 2010
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201003490
Subject(s) - homonuclear molecule , silicon , chemical bond , silicide , materials science , high pressure , crystallography , binary number , metallic bonding , metal , shell (structure) , nanotechnology , chemistry , metallurgy , engineering physics , molecule , physics , organic chemistry , composite material , arithmetic , mathematics
Under high‐pressure high‐temperature conditions, the title compounds with 4, 5, 6, or 8 SiSi contacts are formed. The interatomic distances can be scaled to the number of homonuclear neighbors in the silicide framework. Analysis of the chemical bonding reveals multicenter bonds between metal and Si atoms (see figure for CeSi 5 : Si blue and green, Ce red) and a contribution of semi‐core states (the penultimate shell) of Ce to the chemical bonding.