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Sub‐ppm Detection of Nerve Agents Using Chemically Functionalized Silicon Nanoribbon Field‐Effect Transistors
Author(s) -
Clavaguera Simon,
Carella Alexandre,
Caillier Laurent,
Celle Caroline,
Pécaut Jacques,
Lenfant Stéphane,
Vuillaume Dominique,
Simonato JeanPierre
Publication year - 2010
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201000122
Subject(s) - transistor , detector , silicon , field effect transistor , field (mathematics) , optoelectronics , computer science , materials science , function (biology) , nanotechnology , voltage , electrical engineering , telecommunications , engineering , mathematics , evolutionary biology , pure mathematics , biology
A chemical receptor specific to traces of organophosphorus agents (OPs) has been synthesized and grafted to a silicon nanoribbon field‐effect transistor (SiNR‐FET). X‐ray structures illustrate the structural modifications of the receptor upon exposure to nerve agent simulants. A highly sensitive and selective detector of OPs can be obtained by monitoring the Drain‐Source current of the SiNR‐FET at an optimum back‐gate voltage as a function of time.