Sub‐ppm Detection of Nerve Agents Using Chemically Functionalized Silicon Nanoribbon Field‐Effect Transistors | Zendy

Clavaguera Simon | Zendy; Carella Alexandre | Zendy; Caillier Laurent | Zendy; Celle Caroline | Zendy; Pécaut Jacques | Zendy; Lenfant Stéphane | Zendy; Vuillaume Dominique | Zendy; Simonato JeanPierre | Zendy

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Sub‐ppm Detection of Nerve Agents Using Chemically Functionalized Silicon Nanoribbon Field‐Effect Transistors

Author(s) -

Clavaguera Simon,

Carella Alexandre,

Caillier Laurent,

Celle Caroline,

Pécaut Jacques,

Lenfant Stéphane,

Vuillaume Dominique,

Simonato JeanPierre

Publication year - 2010

Publication title -

angewandte chemie international edition

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 5.831

H-Index - 550

eISSN - 1521-3773

pISSN - 1433-7851

DOI - 10.1002/anie.201000122

Subject(s) - transistor , detector , silicon , field effect transistor , field (mathematics) , optoelectronics , computer science , materials science , function (biology) , nanotechnology , voltage , electrical engineering , telecommunications , engineering , mathematics , evolutionary biology , pure mathematics , biology

A chemical receptor specific to traces of organophosphorus agents (OPs) has been synthesized and grafted to a silicon nanoribbon field‐effect transistor (SiNR‐FET). X‐ray structures illustrate the structural modifications of the receptor upon exposure to nerve agent simulants. A highly sensitive and selective detector of OPs can be obtained by monitoring the Drain‐Source current of the SiNR‐FET at an optimum back‐gate voltage as a function of time.

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