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Understanding Ionic Vacancy Diffusion Growth of Cuprous Sulfide Nanowires
Author(s) -
Liu Xiaohua,
Mayer Matthew T.,
Wang Dunwei
Publication year - 2010
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.200906562
Subject(s) - nanowire , vacancy defect , diffusion , nanostructure , materials science , copper , copper sulfide , ionic bonding , sulfur , chemical physics , nanotechnology , ion , sulfide , substrate (aquarium) , chemical engineering , crystallography , metallurgy , chemistry , thermodynamics , physics , oceanography , organic chemistry , geology , engineering
Designer stubble : The growth of Cu 2 S nanowires was found to be governed by the diffusion of copper ion vacancies. The resulting nanostructure morphologies depend on the defect density in the copper substrate. Balanced sulfur feeding produced uniform and aligned Cu 2 S nanowires (see picture) that hold great promise in converting solar energy at high efficiencies.