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Inside Cover: Surface Passivation and Transfer Doping of Silicon Nanowires (Angew. Chem. Int. Ed. 52/2009)
Author(s) -
Guo ChunSheng,
Luo LinBao,
Yuan GuoDong,
Yang XiaoBao,
Zhang RuiQin,
Zhang WenJun,
Lee ShuitTong
Publication year - 2009
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.200906383
Subject(s) - passivation , doping , nanomaterials , adsorption , materials science , silicon , nanowire , nanotechnology , silicon nanowires , cover (algebra) , volume (thermodynamics) , chemical engineering , layer (electronics) , chemistry , optoelectronics , physics , mechanical engineering , engineering , quantum mechanics
The large surface‐to‐volume ratio of nanomaterials could facilitate efficient doping using purely surface passivation and adsorption. In their Communication on page 9896 ff., R. Q. Zhang, S. T. Lee, and co‐workers describe surface passivation and transfer doping in silicon nanowires (SiNWs, see picture) by surface termination with hydrogen atoms and adsorption of ammonia molecules. The approach is an alternative to conventional volume doping to modulate the conductivity of SiNWs or other nanomaterials.