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Facile Chemical Solution Deposition of High‐Mobility Epitaxial Germanium Films on Silicon
Author(s) -
Zou Guifu,
Luo Hongmei,
Ronning Filip,
Sun Baoquan,
McCleskey Thomas M.,
Burrell Anthony K.,
Bauer Eve,
Jia Q. X.
Publication year - 2010
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.200905804
Subject(s) - germanium , epitaxy , silicon , materials science , substrate (aquarium) , deposition (geology) , optoelectronics , silicon germanium , electron mobility , chemical engineering , hall effect , nanotechnology , electrical resistivity and conductivity , electrical engineering , layer (electronics) , paleontology , oceanography , sediment , engineering , biology , geology
Getting a move on : A facile chemical solution deposition method is used for the first time for the epitaxial growth of germanium on an silicon substrate. The germanium films show Hall mobility values as high as 1700 cm 2 V −1 s −1 for a carrier concentration of 3.45×10 19 cm −3 at room temperature.