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Surface Passivation and Transfer Doping of Silicon Nanowires
Author(s) -
Guo ChunSheng,
Luo LinBao,
Yuan GuoDong,
Yang XiaoBao,
Zhang RuiQin,
Zhang WenJun,
Lee ShuitTong
Publication year - 2009
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.200904890
Subject(s) - doping , passivation , silicon , nanowire , nanotechnology , surface (topology) , materials science , silicon nanowires , surface modification , conductivity , computer science , optoelectronics , chemistry , chemical engineering , engineering , layer (electronics) , geometry , mathematics
Staying on top : Altering the surface of silicon nanowires (SiNWs) by terminating the surface with different species and/or introducing surface adsorbates can change the electrical properties of the SiNWs. Such easy, nondestructive conductivity modification would expand possible applications of SiNWs.