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Semiconductor Gas Sensors: Dry Synthesis and Application
Author(s) -
Tricoli Antonio,
Righettoni Marco,
Teleki Alexandra
Publication year - 2010
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.200903801
Subject(s) - chemical vapor deposition , materials science , deposition (geology) , semiconductor , fabrication , nanotechnology , stoichiometry , nanoparticle , oxide , chemical engineering , porosity , optoelectronics , chemistry , organic chemistry , composite material , metallurgy , medicine , paleontology , alternative medicine , pathology , sediment , engineering , biology
Since the development of the first chemoresistive metal oxide based gas sensors, transducers with innovative properties have been prepared by a variety of wet‐ and dry‐deposition methods. Among these, direct assembly of nanostructured films from the gas phase promises simple fabrication and control and with the appropriate synthesis and deposition methods nm to μm thick films, can be prepared. Dense structures are achieved by tuning chemical or vapor deposition methods whereas particulate films are obtained by deposition of airborne, mono‐ or polydisperse, aggregated or agglomerated nanoparticles. Innovative materials in non‐equilibrium or sub‐stoichiometric states are captured by rapid cooling during their synthesis. This Review presents some of the most common chemical and vapor‐deposition methods for the synthesis of semiconductor metal oxide based detectors for chemical gas sensors. In addition, the synthesis of highly porous films by novel aerosol methods is discussed. A direct comparison of structural and chemical properties with sensing performance is given.