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A Low‐Temperature Molecular Approach to Highly Conductive Tin‐Rich Indium Tin Oxide Thin Films with Durable Electro‐Optical Performance
Author(s) -
Aksu Yilmaz,
Driess Matthias
Publication year - 2009
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.200901204
Subject(s) - indium tin oxide , tin , electrical conductor , materials science , indium , transparent conducting film , electroluminescence , thin film , nanotechnology , oxide , optoelectronics , computer science , metallurgy , composite material , layer (electronics)
Save energy, smile! Highly conductive tin‐rich indium tin oxide (ITO) composites are easily accessible using the molecular precursor Sn( t BuO) 3 In. The as‐prepared transparent and highly conductive thin films on glass substrates are atomically flat and show the best performance to date in ITO‐based electroluminescent applications.