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Chemical Infiltration during Atomic Layer Deposition: Metalation of Porphyrins as Model Substrates
Author(s) -
Zhang Lianbing,
Patil Avinash J.,
Li Le,
Schierhorn Angelika,
Mann Stephen,
Gösele Ulrich,
Knez Mato
Publication year - 2009
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.200900426
Subject(s) - metalation , porphyrin , atomic layer deposition , chemistry , supramolecular chemistry , molecule , diethylzinc , layer (electronics) , inorganic chemistry , photochemistry , organic chemistry , catalysis , enantioselective synthesis
New uses for ALD : By applying standard metal oxide atomic layer deposition (ALD) to two types of porphyrins, site‐specific chemical infiltration of substrate molecules is achieved: Diethylzinc can diffuse into the interior of porphyrin supramolecular structures and induce metalation of the porphyrin molecules from the vapor phase. A=Ph, p ‐HO 3 SC 6 H 4 .