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p‐Type Field‐Effect Transistors of Single‐Crystal Zinc Telluride Nanobelts
Author(s) -
Zhang Jun,
Chen PoChiang,
Shen Guozhen,
He Jibao,
Kumbhar Amar,
Zhou Chongwu,
Fang Jiye
Publication year - 2008
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.200804073
Subject(s) - materials science , optoelectronics , oleylamine , crystal (programming language) , semiconductor , field effect transistor , telluride , transistor , zinc , nanotechnology , electrical engineering , metallurgy , nanocrystal , voltage , engineering , computer science , programming language
Is ZnTe it great : Controlling the crystal‐growth direction leads to formation of single‐crystal ZnTe nanobelts along the 〈 $\bar 2$ 00〉 direction. The nanobelts, which were synthesized in oleylamine at 250 °C, have a narrow thickness (<6 nm). The ZnTe nanobelts behave as p‐type semiconductors in field‐effect transistors (see picture).