p‐Type Field‐Effect Transistors of Single‐Crystal Zinc Telluride Nanobelts | Zendy

Zhang Jun | Zendy; Chen PoChiang | Zendy; Shen Guozhen | Zendy; He Jibao | Zendy; Kumbhar Amar | Zendy; Zhou Chongwu | Zendy; Fang Jiye | Zendy

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p‐Type Field‐Effect Transistors of Single‐Crystal Zinc Telluride Nanobelts

Author(s) -

Zhang Jun,

Chen PoChiang,

Shen Guozhen,

He Jibao,

Kumbhar Amar,

Zhou Chongwu,

Fang Jiye

Publication year - 2008

Publication title -

angewandte chemie international edition

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 5.831

H-Index - 550

eISSN - 1521-3773

pISSN - 1433-7851

DOI - 10.1002/anie.200804073

Subject(s) - materials science , optoelectronics , oleylamine , crystal (programming language) , semiconductor , field effect transistor , telluride , transistor , zinc , nanotechnology , electrical engineering , metallurgy , nanocrystal , voltage , engineering , computer science , programming language

Is ZnTe it great : Controlling the crystal‐growth direction leads to formation of single‐crystal ZnTe nanobelts along the 〈 $\bar 2$ 00〉 direction. The nanobelts, which were synthesized in oleylamine at 250 °C, have a narrow thickness (<6 nm). The ZnTe nanobelts behave as p‐type semiconductors in field‐effect transistors (see picture).

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