Synthesis of Heterometallic Group 13 Nanoclusters and Inks for Oxide Thin‐Film Transistors | Zendy

Mensinger Zachary L. | Zendy; Gatlin Jason T. | Zendy; Meyers Stephen T. | Zendy; Zakharov Lev N. | Zendy; Keszler Douglas A. | Zendy; Johnson Darren W. | Zendy

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Synthesis of Heterometallic Group 13 Nanoclusters and Inks for Oxide Thin‐Film Transistors

Author(s) -

Mensinger Zachary L.,

Gatlin Jason T.,

Meyers Stephen T.,

Zakharov Lev N.,

Keszler Douglas A.,

Johnson Darren W.

Publication year - 2008

Publication title -

angewandte chemie international edition

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 5.831

H-Index - 550

eISSN - 1521-3773

pISSN - 1433-7851

DOI - 10.1002/anie.200803514

Subject(s) - nanoclusters , cluster (spacecraft) , transistor , nanotechnology , materials science , indium , oxide , computer science , optoelectronics , physics , metallurgy , computer network , quantum mechanics , voltage

Cluster's last stand : The hydrated gallium/indium nanocluster [Ga 7 In 6 (μ 3 ‐OH) 6 (μ‐OH) 18 (H 2 O) 24 (NO 3 ) 15 ] was prepared in a facile, high‐yielding synthesis. The use of a key nitroso‐containing organic compound as an additive allows for the isolation of multiple grams of the cluster. This larger‐scale synthesis facilitates use of the cluster as a single‐source precursor for effective thin‐film transistors.

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