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Synthesis of Heterometallic Group 13 Nanoclusters and Inks for Oxide Thin‐Film Transistors
Author(s) -
Mensinger Zachary L.,
Gatlin Jason T.,
Meyers Stephen T.,
Zakharov Lev N.,
Keszler Douglas A.,
Johnson Darren W.
Publication year - 2008
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.200803514
Subject(s) - nanoclusters , cluster (spacecraft) , transistor , nanotechnology , materials science , indium , oxide , computer science , optoelectronics , physics , metallurgy , computer network , quantum mechanics , voltage
Cluster's last stand : The hydrated gallium/indium nanocluster [Ga 7 In 6 (μ 3 ‐OH) 6 (μ‐OH) 18 (H 2 O) 24 (NO 3 ) 15 ] was prepared in a facile, high‐yielding synthesis. The use of a key nitroso‐containing organic compound as an additive allows for the isolation of multiple grams of the cluster. This larger‐scale synthesis facilitates use of the cluster as a single‐source precursor for effective thin‐film transistors.