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A Practical, Self‐Catalytic, Atomic Layer Deposition of Silicon Dioxide
Author(s) -
Bachmann Julien,
Zierold Robert,
Chong Yuen Tung,
Hauert Roland,
Sturm Chris,
SchmidtGrund Rüdiger,
Rheinländer Bernd,
Grundmann Marius,
Gösele Ulrich,
Nielsch Kornelius
Publication year - 2008
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.200800245
Subject(s) - atomic layer deposition , layer (electronics) , catalysis , silicon dioxide , deposition (geology) , hydrolysis , silicon , nanotechnology , chemical engineering , nanostructure , thin film , atomic layer epitaxy , materials science , chemistry , organic chemistry , optoelectronics , engineering , paleontology , sediment , biology
Molecular self‐attack: According to mythology, a scorpion may sting itself to death; similarly, 3‐aminopropyltriethoxysilane catalyzes its own hydrolysis in the atomic layer deposition (ALD) of SiO 2 thin films and nanostructures. Between 120 and 200 °C, the growth rate is constant at 0.06 nm per ALD cycle. The SiO 2 films are chemically and optically pure. SiO 2 nanotubes of aspect ratio 500 exhibit smooth walls of accurately controlled thickness.
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