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Non‐Aqueous Routes to Metal Oxide Thin Films by Atomic Layer Deposition
Author(s) -
Rauwel Erwan,
Clavel Guylhaine,
Willinger MarcGeorg,
Rauwel Protima,
Pinicola
Publication year - 2008
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.200705550
Subject(s) - atomic layer deposition , oxide , aqueous solution , metal , layer (electronics) , thin film , deposition (geology) , alkoxide , materials science , nanotechnology , chemical engineering , atomic layer epitaxy , inorganic chemistry , chemistry , organic chemistry , metallurgy , catalysis , geology , paleontology , sediment , engineering
Controlled growth: A non‐aqueous approach inspired from sol–gel chemistry and adapted to the formation of metal oxide thin films by means of atomic layer deposition is presented. The process is based on the reaction of a carboxylic acid with an alkoxide. Growth of metal oxides is achieved at temperatures as low as 50 °C on various supports including carbon nanotubes (see TEM picture). The as‐grown films show excellent uniformity and possess good dielectric properties.