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Cluster‐Based Holey Semiconductors
Author(s) -
Hüsing Nicola
Publication year - 2008
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.200705289
Subject(s) - chalcogenide , cluster (spacecraft) , semiconductor , materials science , germanium , porosity , ion , nanotechnology , optoelectronics , chemical engineering , chemistry , computer science , silicon , composite material , engineering , organic chemistry , programming language
Picking holes : Self‐assembly of germanium chalcogenide clusters in the presence of metal ions is a new and promising approach to the synthesis of porous semiconducting networks. Even monolithic highly porous aerogels with high internal surface areas can be prepared by sol–gel processing of anionic [GeQ 4 ] 4− , [Sn 2 Q 6 ] 4− , or [Ge 4 Q 10 ] 4− clusters (Q=Se, S) in the presence of Pt 2+ (see scheme).
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