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A Crystalline, Large‐Pore, Microporous Semiconductor
Author(s) -
Shulman Alexander,
Palmqvist Anders E. C.
Publication year - 2007
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.200603075
Subject(s) - microporous material , semiconductor , materials science , ion , trigonal crystal system , crystallography , semiconductor materials , ring (chemistry) , nanotechnology , chemistry , crystal structure , optoelectronics , composite material , organic chemistry
Tubes, dumbbells, and pyramids : A crystalline, large‐pore, microporous semiconductor, |Rb 18 |[Sb 36 O 54 ][(SbTe 3 ) 2 (Te 2 ) 6 ] (Rb‐CTH‐1), which consists of an 18‐ring {Sb 18 O 27 } tubular unit surrounded by an intricate, ordered arrangement of trigonal‐pyramidal {SbTe 3 } 3− ions and Te 2 2− dumbbells and lined with Rb + ions, has been prepared (see picture; turquoise R). This semiconductor has a band gap of approximately 850 meV.