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Bulk Preparation of Si–SiO x Hierarchical Structures: High‐Density Radially Oriented Amorphous Silica Nanowires on a Single‐Crystal Silicon Nanocore
Author(s) -
Wang Hui,
Zhang Xiaohong,
Meng Xiangmin,
Zhou Shaomin,
Wu Shikang,
Shi Wensheng,
Lee Shuittong
Publication year - 2005
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.200501960
Subject(s) - materials science , nanowire , silicon , evaporation , nanotechnology , amorphous solid , tin oxide , chemical engineering , scanning electron microscope , amorphous silicon , single crystal , silicon oxide , oxide , crystallography , optoelectronics , crystalline silicon , composite material , chemistry , metallurgy , engineering , physics , silicon nitride , thermodynamics
Promising building blocks : High‐density radially‐oriented amorphous silica nanowires standing on a single‐crystal Si nanocore were synthesized by simple thermal evaporation of silicon with tin as catalyst. The growth process (see schematic picture) appears to involve concurrent vapor–liquid–solid and oxide‐assisted growth mechanisms. Scanning electron micrographs corresponding to 1 and 2 are also shown.

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