Premium
YbGaGe: Zero Thermal Expansion as a Result of an Electronic Valence Transition?
Author(s) -
Stöwe Klaus
Publication year - 2004
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.200401757
Subject(s) - valency , valence (chemistry) , ytterbium , thermal expansion , ion , materials science , condensed matter physics , thermal , thermodynamics , physics , doping , quantum mechanics , composite material , philosophy , linguistics
In contrast to classic ZTE materials (ZTE=zero thermal expansion), the ZTE effect in YbGaGe (see crystal structure) is caused by the change in the valency of the ytterbium ion from +2.6 to +2 with decreasing temperature. This change in the valence state compensates for the contraction of the net as the temperature decreases.