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Ga 2 O 3 and GaN Semiconductor Hollow Spheres
Author(s) -
Sun Xiaoming,
Li Yadong
Publication year - 2004
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.200353212
Subject(s) - spheres , semiconductor , materials science , range (aeronautics) , carbon fibers , optoelectronics , infrared , layer (electronics) , optics , nanotechnology , composite material , physics , astronomy , composite number
Carbon spheres are used as templates to prepare semiconductor hollow spheres of Ga 2 O 3 (depicted) and GaN. The thickness and uniformity of the final products are predetermined by the thickness of the active layer of the carbon spheres. The diameter of the spheres can be adjusted in the range of 100 nm to 1.5 μm, which covers the band gaps in the spectral regime from UV to near infrared.